diff --git a/other/materials_designer/specific_examples/Introduction.ipynb b/other/materials_designer/specific_examples/Introduction.ipynb
index db05278bb..08fdbdb11 100644
--- a/other/materials_designer/specific_examples/Introduction.ipynb
+++ b/other/materials_designer/specific_examples/Introduction.ipynb
@@ -50,21 +50,21 @@
"| `X-2D-PAS` | Passivated Surface | [Silicon Surface Passivation](passivation_surface_silicon.ipynb) | *To be added* | [[21]](#ref21) |\n",
"| `X-1D-PAS` | Passivated Edge | [Si Nanowire Edge Passivation](passivation_edge_nanowire_silicon.ipynb) | *To be added* | [[22]](#ref22) |\n",
"| `X-0D-PAS` | Passivated Edge | *To be added* | — | — |\n",
- "| `X-0D-CUT` | Slab Cutout | [Custom Cutout in Etched Silicon](custom_cutout_etched_silicon.ipynb) | *To be added* | — |\n",
+ "| `X-0D-CUT` | Slab Cutout | [Custom Cutout in Etched Silicon](custom_cutout_etched_silicon.ipynb) | *To be added* | [[25]](#ref25) |\n",
"\n",
"## References\n",
"\n",
"[1] Eglitis, R. I., & Vanderbilt, D. (2008). First-principles calculations of atomic and electronic structure of SrTiO₃ (001) and (011) surfaces. *Physical Review B*, 77(19), 195408. https://doi.org/10.1103/PhysRevB.77.195408\n",
"\n",
- "[2] Larsen, A. H., et al. (2011). Structure optimization of supported gold clusters. *Physical Review B*, 84(24), 245429. https://doi.org/10.1103/PhysRevB.84.245429\n",
+ "[2] Larsen, A. H., et al. (2011). Electronic shell structure and chemisorption on gold nanoparticles. *Physical Review B*, 84(24), 245429. https://doi.org/10.1103/PhysRevB.84.245429\n",
"\n",
"[3] Muller, D. A., et al. (1999). The electronic structure at the atomic scale of ultrathin gate oxides. *Nature*, 399(6738), 758-761. https://doi.org/10.1038/21602\n",
"\n",
- "[4] Jung, J., et al. (2015). Moiré band model and band gaps of graphene on hexagonal boron nitride. *Nature Communications*, 6, 6308. https://doi.org/10.1038/ncomms7308\n",
+ "[4] Jung, J., et al. (2015). Origin of band gaps in graphene on hexagonal boron nitride. *Nature Communications*, 6, 6308. https://doi.org/10.1038/ncomms7308\n",
"\n",
"[5] Kang, Y.-J., Kang, J., & Chang, K. J. (2008). Electronic structure of graphene and doping effect on SiO₂. Physical Review B, 78(11), 115404. https://doi.org/10.1103/PhysRevB.78.115404\n",
"\n",
- "[6] Shan, T. R., et al. (2011). Molecular dynamics study of the adhesion of Cu/SiO₂ interfaces using a variable-charge interatomic potential. *Physical Review B*, 83(11), 115327. https://doi.org/10.1103/PhysRevB.83.115327\n",
+ "[6] Shan, T.-R., et al. (2011). Molecular dynamics study of the adhesion of Cu/SiO₂ interfaces using a variable-charge interatomic potential. *Physical Review B*, 83(11), 115327. https://doi.org/10.1103/PhysRevB.83.115327\n",
"\n",
"[7] Dahal, A., & Batzill, M. (2014). Graphene–nickel interfaces: a review. *Nanoscale*, 6(5), 2548-2562. https://doi.org/10.1039/c3nr05279f\n",
"\n",
@@ -78,19 +78,19 @@
"\n",
"[12] Zou, X., et al. (2015). Grain boundary properties of elemental two-dimensional materials. *Nano Letters*, 15(5), 3495-3500. https://doi.org/10.1021/acs.nanolett.5b01852\n",
"\n",
- "[13] Frolov, T., et al. (2013). Structural phase transformations in metallic grain boundaries. *Nature Communications*, 4, 2919. https://doi.org/10.1038/ncomms2919\n",
+ "[13] Frolov, T., et al. (2013). Structural phase transformations in metallic grain boundaries. *Nature Communications*, 4, 1899. https://doi.org/10.1038/ncomms2919\n",
"\n",
- "[14] Sangiovanni, D. G., Mei, A. B., Edstrom, D., Hultman, L., Chirita, V., Petrov, I., & Greene, J. E. (2018). Effects of surface vibrations on interlayer mass transport: Ab initio molecular dynamics investigation of Ti adatom descent pathways and rates from TiN/TiN(001) islands. Physical Review B, 97(3), 035406. https://doi.org/10.1103/PhysRevB.97.035406\n",
+ "[14] Sangiovanni, D. G., Mei, A. B., Edström, D., Hultman, L., Chirita, V., Petrov, I., & Greene, J. E. (2018). Effects of surface vibrations on interlayer mass transport: Ab initio molecular dynamics investigation of Ti adatom descent pathways and rates from TiN/TiN(001) islands. Physical Review B, 97(3), 035406. https://doi.org/10.1103/PhysRevB.97.035406\n",
"\n",
- "[15] Sljivancanin, Z., & Hammer, B. (2002). Oxygen dissociation at close-packed Pt terraces, Pt steps, and Ag-covered Pt steps studied with density functional theory. *Surface Science*, 515(2-3), 235-244. https://doi.org/10.1016/s0039-6028(02)01908-8\n",
+ "[15] Šljivančanin, Ž., & Hammer, B. (2002). Oxygen dissociation at close-packed Pt terraces, Pt steps, and Ag-covered Pt steps studied with density functional theory. *Surface Science*, 515(1), 235-244. https://doi.org/10.1016/s0039-6028(02)01908-8\n",
"\n",
"[16] Miceli, G., & Pasquarello, A. (2016). Self-compensation due to point defects in Mg-doped GaN. *Physical Review B*, 93(16), 165207. https://doi.org/10.1103/PhysRevB.93.165207\n",
"\n",
"[17] Togo, A., et al. (2006). First-principles calculations of native defects in tin monoxide. *Physical Review B*, 74(19), 195128. https://doi.org/10.1103/PhysRevB.74.195128\n",
"\n",
- "[18] Lherbier, A., et al. (2011). Electronic and transport properties of unbalanced sublattice N-doping in graphene. *Physical Review B*, 84(24), 245446. https://doi.org/10.1103/PhysRevB.84.245446\n",
+ "[18] Fujimoto, Y., & Saito, S. (2011). Formation, stabilities, and electronic properties of nitrogen defects in graphene. *Physical Review B*, 84(24), 245446. https://doi.org/10.1103/PhysRevB.84.245446\n",
"\n",
- "[19] Ivády, V., et al. (2022). Ab initio theory of the negatively charged boron vacancy qubit in hexagonal boron nitride. *npj Computational Materials*, 8(1), 1-9. https://doi.org/10.1038/s41524-022-00730-w\n",
+ "[19] Bertoldo, F., Ali, S., Manti, S., & Thygesen, K. S. (2022). Quantum point defects in 2D materials - the QPOD database. *npj Computational Materials*, 8(1), 56. https://doi.org/10.1038/s41524-022-00730-w\n",
"\n",
"[20] Thompson-Flagg, R. C., et al. (2009). Rippling of graphene. *EPL (Europhysics Letters)*, 85(4), 46002. https://doi.org/10.1209/0295-5075/85/46002\n",
"\n",
@@ -99,7 +99,10 @@
"[22] Aradi, B., et al. (2007). Theoretical study of the chemical gap tuning in silicon nanowires. *Physical Review B*, 76(3), 035305. https://doi.org/10.1103/PhysRevB.76.035305\n",
"\n",
"[23] Van de Walle, C. G., & Martin, R. M. (1986). Theoretical calculations of heterojunction discontinuities in the Si/Ge system. *Physical Review B*, 34(8), 5621. https://doi.org/10.1103/PhysRevB.34.5621\n",
- "[24] Hinuma, Y., Grüneis, A., Kresse, G., & Oba, F. (2014). Band alignment of semiconductors from density-functional theory and many-body perturbation theory. *Physical Review B*, 90(15), 155405. https://doi.org/10.1103/PhysRevB.90.155405\n"
+ "\n",
+ "[24] Hinuma, Y., Grüneis, A., Kresse, G., & Oba, F. (2014). Band alignment of semiconductors from density-functional theory and many-body perturbation theory. *Physical Review B*, 90(15), 155405. https://doi.org/10.1103/PhysRevB.90.155405\n",
+ "\n",
+ "[25] Chen, Y., Fang, F., & Zhang, N. (2024). Advance in additive manufacturing of 2D materials at the atomic and close-to-atomic scale. *npj 2D Materials and Applications*, 8(1), 17. https://doi.org/10.1038/s41699-024-00456-x\n"
]
},
{
diff --git a/other/materials_designer/specific_examples/custom_cutout_etched_silicon.ipynb b/other/materials_designer/specific_examples/custom_cutout_etched_silicon.ipynb
index 497ec1f71..5af9d6880 100644
--- a/other/materials_designer/specific_examples/custom_cutout_etched_silicon.ipynb
+++ b/other/materials_designer/specific_examples/custom_cutout_etched_silicon.ipynb
@@ -13,6 +13,13 @@
"- Two parallel channels at the top\n",
"- A deeper central cavity\n",
"\n",
+ "Following the publication:\n",
+ "\n",
+ "> **Yixin Chen, Fengzhou Fang, and Nan Zhang**\n",
+ "> \"Advance in additive manufacturing of 2D materials at the atomic and close-to-atomic scale\"\n",
+ "> npj 2D Materials and Applications 8, 17 (2024)\n",
+ "> [DOI: 10.1038/s41699-024-00456-x](https://doi.org/10.1038/s41699-024-00456-x)\n",
+ "\n",
"
Usage
\n",
"\n",
"1. Make sure to select Input Material (in the outer runtime) before running the notebook.\n",
diff --git a/other/materials_designer/specific_examples/defect_point_interstitial_tin_oxide.ipynb b/other/materials_designer/specific_examples/defect_point_interstitial_tin_oxide.ipynb
index 05a9d1d55..c921cfe95 100644
--- a/other/materials_designer/specific_examples/defect_point_interstitial_tin_oxide.ipynb
+++ b/other/materials_designer/specific_examples/defect_point_interstitial_tin_oxide.ipynb
@@ -9,7 +9,7 @@
"\n",
"This example demonstrates how to create a O interstitial defect in a SnO material. Following the publication:\n",
"\n",
- "> **A. Togo, F. Oba, and I. Tanaka**\n",
+ "> **A. Togo, F. Oba, I. Tanaka, and K. Tatsumi**\n",
"> \"First-principles calculations of native defects in tin monoxide\"\n",
"> Phys. Rev. B 74, 195128 (2006)\n",
"> [DOI: 10.1103/PhysRevB.74.195128](https://doi.org/10.1103/PhysRevB.74.195128)\n",
diff --git a/other/materials_designer/specific_examples/defect_point_interstitial_tin_oxide_SIMULATION.ipynb b/other/materials_designer/specific_examples/defect_point_interstitial_tin_oxide_SIMULATION.ipynb
index 9f8e84d39..5b5a7cf1f 100644
--- a/other/materials_designer/specific_examples/defect_point_interstitial_tin_oxide_SIMULATION.ipynb
+++ b/other/materials_designer/specific_examples/defect_point_interstitial_tin_oxide_SIMULATION.ipynb
@@ -7,7 +7,7 @@
"source": [
"# Formation Energy and DOS of the V_Sn-O_i Defect Pair in SnO\n",
"\n",
- "> **A. Togo, F. Oba, and I. Tanaka**\n",
+ "> **A. Togo, F. Oba, I. Tanaka, and K. Tatsumi**\n",
"> \"First-principles calculations of native defects in tin monoxide\"\n",
"> Phys. Rev. B 74, 195128 (2006)\n",
"> [DOI: 10.1103/PhysRevB.74.195128](https://doi.org/10.1103/PhysRevB.74.195128)\n",
@@ -718,7 +718,7 @@
"source": [
"## References\n",
"\n",
- "[1] Togo, A., Oba, F., & Tanaka, I. (2006). First-principles calculations of native defects in tin monoxide. Phys. Rev. B, 74(19), 195128. https://doi.org/10.1103/PhysRevB.74.195128"
+ "[1] Togo, A., Oba, F., Tanaka, I., & Tatsumi, K. (2006). First-principles calculations of native defects in tin monoxide. Phys. Rev. B, 74(19), 195128. https://doi.org/10.1103/PhysRevB.74.195128"
]
}
],
diff --git a/other/materials_designer/specific_examples/defect_point_substitution_graphene.ipynb b/other/materials_designer/specific_examples/defect_point_substitution_graphene.ipynb
index f78e5f2b6..607861b0f 100644
--- a/other/materials_designer/specific_examples/defect_point_substitution_graphene.ipynb
+++ b/other/materials_designer/specific_examples/defect_point_substitution_graphene.ipynb
@@ -13,7 +13,7 @@
"\n",
"[//]: # (